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Sapphire Wafers

Sapphire Wafers

With Orbray’s precision processing technology, we can produce sapphire wafers with various surface orientations (c, r, a, and m-plane), and control the off-cut angle to within 0.1 degree. Using our proprietary technology, we are able to achieve the high quality needed for such applications as epitaxial growth and wafer bonding.

In addition to standard grade substrates for general LED use, we also offer high-quality prime grade wafers. The high-quality cleaning we apply to prime grade wafers results in low contamination from both particles and metal*. We control flatness (TTV, bow, warp, etc.) with our precision manufacturing technology, to minimize any warpage that can occur during epitaxial growth. Our prime grade wafer is optimal for development of new processes and new products. Appli - cations for prime grade wafers include micro-LED, DUV-LED, RF devices, and GaN / AlN / Ga2O3 templates.

* K, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn < 2E10/cm2 with TXRF.

Item Specification
Diameter φ2 inch φ4 inch φ6 inch φ8 inch φ12 inch
Material Artificial sapphire( Al2O3 ≥ 99.99%)
Thickness 430±15μm 650±15μm 1300±20μm 1300±20μm 3000±20μm
OF length 16±1mm 30±1mm 47.5±2.5mm 47.5±2.5mm *negotiable
OF orientation a-plane 0±0.3°
TTV * ≦10μm ≦10μm ≦15μm ≦15μm *negotiable
BOW * -10 ~ 0μm -15 ~ 0μm -20 ~ 0μm -25 ~ 0μm *negotiable
Warp * ≦15μm ≦20μm ≦25μm ≦30μm *negotiable
Front side
Epi-ready (Ra<0.3nm)
Back side
Lapping (Ra 0.6 - 1.2μm)
Packaging Vacuum packaging in clean room
Prime grade High quality cleaning : particle size ≧ 0.3um), ≦ 0.18pcs/cm2, metal contamination ≦ 2E10/cm2
Remarks Customizable specifications: a/ r/ m-plane orientation, off-angle, shape, double side polishing

*TTV (Total Thickness Variation): The difference between the maximum and minimum values of the wafer thickness.
*Bow: The deviation of the center point of the median surface of a free, un-clamped wafer from the reference plane, where the reference plane is defined by the three corners of an equilateral triangle.
*Warp: The difference between the maximum and the minimum distances of the median surface of a free, un-clamped wafer from the reference plane defined above.

High-quality products and services for next-generation semiconductor devices and epitaxial growth

  • High degree of flatness (controlled TTV, bow, warp etc.)
  • High-quality cleaning (low particle contamination, low metal contamination)
  • Substrate drilling, grooving, cutting, and backside polishing
  • Attachment of data such as cleanliness and shape of substrate (optional)

Depending on the specs, we have inventory for substrates of 2 to 8 inches, or up to 300mm in diameter.
Please contact us for any inquiries.

NAPHIA™️ Prime grade wafers

What is prime grade? Our prime grade sapphire wafer has best-in-class quality in terms of flatness and cleanliness.
Aiming for the equivalent cleanliness as for silicon wafers, we have produced sapphire wafers with very low metal contamination (≤5E10/cm2). We are currently achieving lower metal contamination than 2E10/cm2, which is near the detection limit of our measuring instruments (TXRF).

Prime grade wafers


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