Notice of Corporate Name Change - 

Adamant Namiki Precision Jewel Co., Ltd., changed its name to Orbray Co., Ltd., effective January 1, 2023.

A special website is available.

Sapphire Wafers

Sapphire Wafers

"With Orbray’s precision processing technology, we can produce sapphire wafers with various surface orientations (c, r, a, and m-plane), and control the off-cut angle to within 0.1 degree. Using our proprietary technology, we are able to achieve the high quality needed for such applications as epitaxial growth and wafer bonding.

In addition to Standard grade wafers for general LED use, we also offer Prime grade wafers with high-quality flatness and surface cleanliness.

Regarding the wafer flatness (TTV, BOW, WARP, etc.), we can control it with precision manufacturing technology, so that warpage that can occur during epitaxial growth is minimized.

Regarding the wafer cleanliness, our high-quality cleaning results in a low number of particles (*) and low metal contamination (**).
(*) Particle size (≧0.3μm) ≦ 0.18pcs/㎠ with Candela
(**) K, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn ≦ 2E10/㎠ with TXRF

Our Prime grade wafers are optimal for new processes and product development. Application examples include micro-LED, DUV-LED, RF devices, and AlN/Ga2O3 templates.

As for the crystal growth method, we have the technology for EFG (Edge-defined Film-fed Growth)."

Item Specification
Diameter φ2 inch φ4 inch φ6 inch φ8 inch
Material Artificial sapphire( Al2O3 ≥ 99.99%)
Thickness 430±15μm 650±15μm 1300±20μm 1300±20μm
OF length 16±1mm 30±1mm 47.5±2.5mm 47.5±2.5mm
OF orientation a-plane 0±0.3°
TTV * ≦10μm ≦10μm ≦15μm ≦15μm
BOW * -10 ~ 0μm -15 ~ 0μm -20 ~ 0μm -25 ~ 0μm
Warp * ≦15μm ≦20μm ≦25μm ≦30μm
Front side
Epi-ready (Ra<0.3nm)
Back side
Lapping (Ra 0.6 - 1.2μm)
Packaging Vacuum packaging in clean room
Prime grade High quality cleaning : particle size ≧ 0.3um), ≦ 0.18pcs/cm2, metal contamination ≦ 5E10/cm2
Remarks Customizable specifications: a/ r/ m-plane orientation, off-angle, shape, double side polishing

*TTV (Total Thickness Variation):TTV is the difference between the maximum and minimum values of the wafer thickness
*BOW:The distance between the surface and the best fit plane at the center of an unclamped wafer
*Warp:The difference between the maximum positive and minimum deviations from the best fit plane (wafer unclamped)


High quality and services for next-generation semiconductor devices and epitaxial growth

  • High flatness (controlled TTV, BOW, and WARP etc.)
  • High quality cleaning (low particles, lowmetal contamination)
  • Substrate drilling, grooving, cutting, and backside polishing
  • Attachment of measurement data such as cleanness and shape of substrate. (optional)

Depending on the specs, we have inventory for 2 to 8inch, or 300mm diameter substrates.
Please contact us for any inquiries.


*If you cannot find the contact form, please click here.


Mon-Fri 9:00-17:00 JST+81-3-3919-2200


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