"With Orbray’s precision processing technology, we can produce sapphire wafers with various surface orientations (c, r, a, and m-plane), and control the off-cut angle to within 0.1 degree. Using our proprietary technology, we are able to achieve the high quality needed for such applications as epitaxial growth and wafer bonding.
In addition to Standard grade wafers for general LED use, we also offer Prime grade wafers with high-quality flatness and surface cleanliness.
Regarding the wafer flatness (TTV, BOW, WARP, etc.), we can control it with precision manufacturing technology, so that warpage that can occur during epitaxial growth is minimized.
Regarding the wafer cleanliness, our high-quality cleaning results in a low number of particles (*) and low metal contamination (**).
(*) Particle size (≧0.3μm) ≦ 0.18pcs/㎠ with Candela
(**) K, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn ≦ 2E10/㎠ with TXRF
Our Prime grade wafers are optimal for new processes and product development. Application examples include micro-LED, DUV-LED, RF devices, and AlN/Ga2O3 templates.
As for the crystal growth method, we have the technology for EFG (Edge-defined Film-fed Growth)."
| Item | Specification | |||
|---|---|---|---|---|
| Diameter | φ2 inch | φ4 inch | φ6 inch | φ8 inch |
| Material | Artificial sapphire（ Al2O3 ≥ 99.99%） | |||
| Thickness | 430±15μm | 650±15μm | 1300±20μm | 1300±20μm |
| Surface orientation | c-plane(0001) | |||
| OF length | 16±1mm | 30±1mm | 47.5±2.5mm | 47.5±2.5mm |
| OF orientation | a-plane 0±0.3° | |||
| TTV * | ≦10μm | ≦10μm | ≦15μm | ≦15μm |
| BOW * | -10 ~ 0μm | -15 ~ 0μm | -20 ~ 0μm | -25 ~ 0μm |
| Warp * | ≦15μm | ≦20μm | ≦25μm | ≦30μm |
| Front side finishing | Epi-ready (Ra＜0.3nm) | |||
| Back side finishing | Lapping (Ra 0.6 - 1.2μm) | |||
| Packaging | Vacuum packaging in clean room | |||
| Prime grade | High quality cleaning ： particle size ≧ 0.3um), ≦ 0.18pcs/cm2, metal contamination ≦ 5E10/cm2 | |||
| Remarks | Customizable specifications: a/ r/ m-plane orientation, off-angle, shape, double side polishing | |||
*TTV (Total Thickness Variation):TTV is the difference between the maximum and minimum values of the wafer thickness
*BOW:The distance between the surface and the best fit plane at the center of an unclamped wafer
*Warp:The difference between the maximum positive and minimum deviations from the best fit plane (wafer unclamped)
High quality and services for next-generation semiconductor devices and epitaxial growth
- High flatness (controlled TTV, BOW, and WARP etc.)
- High quality cleaning (low particles, lowmetal contamination)
- Substrate drilling, grooving, cutting, and backside polishing
- Attachment of measurement data such as cleanness and shape of substrate. (optional)
Depending on the specs, we have inventory for 2 to 8inch, or 300mm diameter substrates.
Please contact us for any inquiries.
