Sapphire is used as a carrier wafer in the semiconductor process. Utilizing the polishing technology we have cultivated over many years, we are now able to manufacture ultra-large support wafers and carrier plates up to 12 inches (φ300mm). Additional processing such as drilling and grooving is available for all specifications, and our re-polishing and cleaning capabilities mean the wafer can be used repeatedly.
Compared to glass / ceramics, sapphire does not have problems due to distortion and deformation or contamination from degassing, so it can be used without worrying about changes in process conditions. In addition, since sapphire is a material with excellent heat, chemical, and plasma resistance, it can be used in high-temperature processes and harsh environments.
Features of sapphire carrier plates
- No contamination
- High degree of flatness
- High hardness
- High heat resistance
- Highly insulating
- Processing such as drilling is possible, and it can be transported by suction
- Corrosion resistance
- Option: Sapphire vacuum chuck with through holes
| Item | Specification | ||||
|---|---|---|---|---|---|
| Diameter | φ4 inch | φ5 inch | φ6 inch | φ8 inch | φ12 inch |
| Material | Artificial sapphire（ Al2O3 99.99%以上） | ||||
| Thickness | 1±0.003mm | 3±0.005mm | |||
| Orientation | c-plane ( 0001 ) / r-plane ( -1012 ) | c-plane ( 0001 ) | |||
| OF | Flat / Notch / None | ||||
| TTV * | ≦2.5μm | ≦3.0μm | |||
| Front side finishing | Polish (Ra＜0.3nm) | ||||
| Back side finishing | Polish (Ra＜0.3nm) | ||||
| Remarks | Customizable specifications: thickness, orientation, single side polishing. Other options: drilling, laser marking, delivery by thickness classification, re-polishing |
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